Activation of giant silicalite-1 monocrystals combining rapid thermal processing and ozone calcination

Thermal Model of Rapid Thermal Processing Systems

Continuously shrinking device parameters and the enlargement of wafer diameters in semiconductor industry require best temperature homogeneity in Rapid Thermal Processing (RTP). This together with the requirement of high ramp rates in the range of 200 °C s as advantageously used in ultra shallow junction processes [1] challenges temperature control in RTP technology. In order to design advanced...

Combining Reactive Sputtering and Rapid Thermal Processing for Synthesis and Discovery of Metal Oxynitrides

Recent efforts have demonstrated enhanced tailoring of material functionality with mixed anion materials, yet exploratory research with mixed anion chemistries is limited by the sensitivity of these materials to synthesis conditions. Synthesis of a particular metal oxynitride compound by traditional reactive annealing requires specific, limited ranges of both oxygen and nitrogen chemical potent...

Rapid thermal processing of magnetic materials

The rapid thermal processing (RTP) technique features dynamic control of temperature, which permits high heating and cooling rates that cannot be reached with conventional furnace treatments. In recent years, RTP has been increasingly applied to the processing of magnetic materials. The controllable heating profiles provide an approach for the deliberate construction of materials structure via ...

Rapid Thermal Processing of Crystalline Silicon Materials and Solar Cells

Modeling and temperature control of rapid thermal processing

In the past few years, Rapid Thermal Processes (RTP) have gained acceptance as mainstream technology for semi-conductors manufacturing. These processes are characterized by a single wafer processing with a very fast ramp heating of the silicon wafer (up to 200C/sec). The single wafer approach allows for faster wafer processing and better control of process parameters on the wafer. As feature si...